Quantification of preferential sputtering and contamination overlayer effects in AES sputter profiling
- 1 April 1984
- journal article
- research article
- Published by Wiley in Surface and Interface Analysis
- Vol. 6 (2) , 78-81
- https://doi.org/10.1002/sia.740060208
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Characterization of contamination layers by emission angle dependent XPS with a double‐pass CMASurface and Interface Analysis, 1984
- Quantitative evaluation of AES-depth profiles of thin anodic oxide films (Ta2O5/Ta, Nb2O5/Nb)Surface and Interface Analysis, 1983
- Characterization of a high depth‐resolution tantalum pentoxide sputter profiling reference materialSurface and Interface Analysis, 1983
- The statistical sputtering contribution to resolution in concentration-depth profilesThin Solid Films, 1981
- Quantitative depth profiling in surface analysis: A reviewSurface and Interface Analysis, 1980
- Deposition and characterization of thin SiOx filmsThin Solid Films, 1980
- Depth resolution of sputter profiling investigated by combined Auger-x-ray analysis of thin filmsNuclear Instruments and Methods, 1980
- Recoil mixing in solids by energetic ion beamsNuclear Instruments and Methods, 1980
- Quantitative electron spectroscopy of surfaces: A standard data base for electron inelastic mean free paths in solidsSurface and Interface Analysis, 1979
- Auger study of preferred sputtering on binary alloy surfacesSurface Science, 1976