Metal-oxide semiconductor transistors fabricated on Si/Al2O3/Si structures

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Abstract
Metal‐oxide semiconductor field effect transistors (MOSFETs) were fabricated by polycrystalline‐Si gate process on double heteroepitaxially grown Si(100)/Al2O3(100)/Si(100) structures in order to characterize the Si on insulator (SOI) structures. To realize the SOI structures, at first, the epitaxial Al2O3(100) film was grown on a 2‐in. Si(100) wafer, and then, Si epitaxial film was grown on the Al2O3/Si by the chemical vapor deposition method. The SOI wafers were able to be handled in the same way as Si wafers during the device fabrication process. From ID‐VD and ID‐VG properties of the MOSFET, the transistor action was confirmed, and the threshold voltage of 0.4 V and the effective mobility of 540 cm2/V s at VG − VT = 4.0 V were obtained. The epitaxial Si layer was p‐type, and the impurity concentration was considered to be 5×1015 cm−3. These results were very similar to those obtained from Si on sapphire epitaxial films.