Origin of the Peaked Structure in the Conductance of One-Dimensional Silicon Accumulation Layers

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Abstract
We have made extensive studies of the temperature, gate voltage, and electric field dependences of the conductance peaks in small silicon inversion layers in order to distinguish between resonant-tunneling models and a hopping model. We find that many of the peaks are consistent only with a hopping model, whereas some could be consistent with an early resonant-tunneling model. None of our structure is consistent with resonant tunneling if the recent formulation of Stone and Lee is correct.