MBE-grown Ge/GaAs heterojunction bipolar transistors operated at 300 K and 77 K with current gain of 45
- 1 November 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (11) , 2602-2603
- https://doi.org/10.1109/16.43698
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Hot-electron-induced interface state generation in n-channel MOSFET's at 77 KIEEE Transactions on Electron Devices, 1987
- Active area limitation of Ge/GaAs heterojunctions by means of B ion implantationJournal of Applied Physics, 1986