Active area limitation of Ge/GaAs heterojunctions by means of B ion implantation

This publication has 14 references indexed in Scilit:

• Carrier Depletion in Sulfur Doped Epitaxial GaAs Layer by Boron Ion Implantation
  Japanese Journal of Applied Physics, 1983
• Heterostructure bipolar transistors: What should we build?
  Journal of Vacuum Science & Technology B, 1983
• Chemical Etching of Germanium with H₃PO₄–H₂O₂–H₂O Solution
  Japanese Journal of Applied Physics, 1982
• Preparation of Carbon‐Free GaAs Surfaces: AES and RHEED Analysis
  Journal of the Electrochemical Society, 1981
• Low resistance ohmic contacts containing Sb to GaP
  Solid-State Electronics, 1980
• Investigation of compensation in implanted n-GaAs
  Journal of Applied Physics, 1978
• AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED p-n JUNCTIONS IN Ge, Si, GaAs, AND GaP
  Applied Physics Letters, 1966
• Preparation of Ge-GaAs Heterojunctions by Vacuum Evaporation
  Japanese Journal of Applied Physics, 1965
• Experiments on Ge-GaAs heterojunctions
  Solid-State Electronics, 1962
• Germanium-Gallium Arsenide Heterojunctions [Letter to the Editor]
  IBM Journal of Research and Development, 1960