Growth and ferroelectricity of epitaxial-like BaTiO3 films on single-crystal MgO, SrTiO3, and silicon substrates synthesized by pulsed laser deposition

Publisher Website
Google Scholar
Abstract
The epitaxial‐like BaTiO3 (BTO) films with good ferroelectricity are obtained both on (001)SrTiO3 (STO) single crystal and on CeO2 buffered silicon substrate by pulsed laser deposition. The deposition parameters need to be stringently controlled in order to grow BTO films with good crystallinity. The BTO films grown on YBa2Cu3O7−x (YBCO)/CeO2/STO substrates are epitaxial, as confirmed by rocking curve, φ scan, and wide‐angle x‐ray‐diffraction techniques. The alignment of a and b axes of BTO films on YBCO/CeO2/Si substrate is, however, not as perfect as BTO film on YBCO/STO substrate. The BTO/YBCO/CeO2/Si films are only (00l) textured. The ferroelectric property measurement, using the YBCO layer as the base electrode material, shows that the remanent polarization Pr and coercive field Ec of the BTO/YBCO/CeO2/Si films (Pr=3.6 μC/cm2, Ec=11.1 kV/cm) are, however, as good as those of the BTO/YBCO/STO films (Pr=4.0 μC/cm2, Ec=12.5 kV/cm).