The role of the MOS structure in integrated sensors
- 31 December 1983
- journal article
- Published by Elsevier in Sensors and Actuators
- Vol. 4, 507-526
- https://doi.org/10.1016/0250-6874(83)85063-x
Abstract
No abstract availableThis publication has 39 references indexed in Scilit:
- Three-dimensional representation of input and output transducersSensors and Actuators, 1982
- Integrated silicon microbeam PI-FET accelerometerIEEE Transactions on Electron Devices, 1982
- An MOS device for AC measurement of surface impedance with application to moisture monitoringIEEE Transactions on Electron Devices, 1982
- Micromechanical accelerometer integrated with MOS detection circuitryIEEE Transactions on Electron Devices, 1982
- The charge-flow transistor: A new MOS deviceApplied Physics Letters, 1977
- Piezoelectric DMOS strain transducersApplied Physics Letters, 1976
- A hydrogen−sensitive MOS field−effect transistorApplied Physics Letters, 1975
- Charge Coupled Semiconductor DevicesBell System Technical Journal, 1970
- Development of an Ion-Sensitive Solid-State Device for Neurophysiological MeasurementsIEEE Transactions on Biomedical Engineering, 1970
- TRANSDUCER ACTION IN A METAL-INSULATOR-PIEZOELECTRIC-SEMICONDUCTOR TRIODEApplied Physics Letters, 1965