Room-temperature magnetism in Cr-doped AlN semiconductor films
- 23 September 2002
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (13) , 2418-2420
- https://doi.org/10.1063/1.1509475
Abstract
Synthesis and characterization of magnetic semiconductors Al1-xCrxN, in which the atomic fraction of chromium x is up to 0.357, are reported. The films, grown by reactive co-sputtering on silicon, glass, and kapton substrates, have a crystal structure of aluminum nitride. Magnetic and transport properties were studied in the temperature range of 50 to 340 K. The materials are in the dielectric regime and have variable-range-hopping type of conductance. The films are ferromagnetic at temperatures over 340 K. (C) 2002 American Institute of PhysicsKeywords
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