High-temperature and high-frequency performance evaluation of 4H-SiC unipolar power devices
- 28 June 2005
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1, 322-328
- https://doi.org/10.1109/apec.2005.1452945
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- A gate drive circuit for silicon carbide JFETPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004
- Demonst.ration of silicon carbide (SiC) -based motor drivePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004
- A novel SiC J-FET gate drive circuit for sparse matrix converter applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004
- A 1 MHz hard-switched silicon carbide DC/DC converterPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Testing, characterization, and modeling of SiC diodes for transportation applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- 10 A, 2.4 kV Power DiMOSFETs in 4H-SiCIEEE Electron Device Letters, 2002
- SiC power diodes provide breakthrough performance for a wide range of applicationsIEEE Transactions on Power Electronics, 2001
- SiC devices: physics and numerical simulationIEEE Transactions on Electron Devices, 1994
- Silicon-carbide high-voltage (400 V) Schottky barrier diodesIEEE Electron Device Letters, 1992