NOTFET: a high-frequency InP nonlinear transistor
- 1 December 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 11 (12) , 582-584
- https://doi.org/10.1109/55.63046
Abstract
A device called the nonlinearly optimized transconductance field-effect transistor (NOTFET) has been developed for nonlinear circuit applications. An InP NOTFET with two g/sub m/ peaks based on InGaAs and InAlAs channels was designed fabricated, and tested for harmonic generation up to 12 GHz, demonstrating the device concept and its advantages compared to conventional FETs and HEMTs. Multipeak g/sub m//V/sub GS/ characteristics also can be obtained by using a multiheterojunction material structure with uncoupled quantum wells, a possibility which is under investigation.Keywords
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