Real-Time Monitoring of Surface Reactions during Plasma-Enhanced CVD of Silicon

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Abstract
Reacting silicon surfaces in contact with a SiH4 glow discharge have been studied by a real-time, in situ Fourier-transform infrared attenuated total reflection (FT-IR-ATR) technique. In the early stages of silicon deposition at a substrate temperature of 200° C, SiH2 is the major surface species although ( SiH2) n chains and SiH3 also exist, while at room temperature, SiH3 and ( SiH2) n chains are the dominant surface products. At a temperature of -95° C, polymerization reactions among adsorbates proceed on the surface to form polysilanes consisting of ( SiH2) n chains terminated with SiH3.