Formation of hexafluorosilicate on Si surface treated in NH4F investigated by photoemission and surface infrared spectroscopy
- 1 March 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (9) , 1003-1005
- https://doi.org/10.1063/1.108562
Abstract
The chemical nature of Si surfaces treated with ammonium fluoride (NH4F) has been investigated using photoemission and surface infrared spectroscopy. On the surface after treatment in NH4F solution, there remain ammonium compounds such as NH4F and NH4F.HF. Photoemission data demonstrate that under the atmospheric environment, the ammonium compounds remaining on the NH4F‐treated Si surface react with the Si substrate to generate the hexafluorosilicate salt, (NH4)2SiF6. We propose that the formation of (NH4)2SiF6 or SiF62− ions is the dominant reaction pathway in the NH4F etching of Si crystals.Keywords
This publication has 16 references indexed in Scilit:
- An infrared study of thin-film formation on Si and Ge surfaces treated with aqueous NH4F and HFJournal of Applied Physics, 1991
- Comparison of Si(111) surfaces prepared using aqueous solutions of NH4F versus HFApplied Physics Letters, 1991
- A surface ir study of inorganic film formation GaAs, silicon and germanium by aqueous NH4F, and HFThin Solid Films, 1990
- Ideal hydrogen termination of the Si (111) surfaceApplied Physics Letters, 1990
- Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphologyJournal of Vacuum Science & Technology A, 1989
- Infrared spectroscopy of Si(111) surfaces after HF treatment: Hydrogen termination and surface morphologyApplied Physics Letters, 1988
- Chemical and electronic structure of the SiO2/Si interfaceMaterials Science Reports, 1986
- Unusually Low Surface-Recombination Velocity on Silicon and Germanium SurfacesPhysical Review Letters, 1986
- Investigations on hydrophilic and hydrophobic silicon (100) wafer surfaces by X-ray photoelectron and high-resolution electron energy loss-spectroscopyApplied Physics A, 1986
- Formation of SiH bonds on the surface of microcrystalline silicon covered with SiOx by HF treatmentSolid State Communications, 1984