Room-temperature electroluminescence of erbium-doped amorphous hydrogenated silicon
- 13 January 1997
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (2) , 240-242
- https://doi.org/10.1063/1.118377
Abstract
We have observed strong room-temperature electroluminescence at 1.54 μm induced by erbium ions in amorphous hydrogenated silicon ( a -Si:H). The device consisted of an Al /a- Si:H(Er)/ n- c-Si/Al structure. A mechanism for electronic excitation of the erbium ions in the amorphous matrix is proposed that is based on defect-related Auger excitation.Keywords
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