Recombination at defects in amorphous silicon (a-Si:H)
- 1 October 1995
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 190 (1-2) , 9-20
- https://doi.org/10.1016/0022-3093(95)00252-9
Abstract
No abstract availableKeywords
This publication has 31 references indexed in Scilit:
- Non-equilibrium carriers in a-Si:H excited by defect absorptionJournal of Non-Crystalline Solids, 1993
- Nonequilibrium occupancy of tail states and defects ina-Si:H: Implications for defect structurePhysical Review B, 1993
- Thermodynamical equilibrium gap-state distribution in undoped a-Si: HPhilosophical Magazine Part B, 1991
- Potential fluctuations due to inhomogeneity in hydrogenated amorphous silicon and the resulting charged dangling-bond defectsPhysical Review B, 1990
- Structure and Electronic States in Disordered SystemsPhysical Review Letters, 1986
- Gap states in hydrogenated amorphous silicon The origins of the light-induced ESR and the low-energy luminescencePhilosophical Magazine Part B, 1985
- Recombination in-Si: H: Transitions through defect statesPhysical Review B, 1984
- Effects of annealing on plasma-deposited-Si:H films grown under optimal conditionsPhysical Review B, 1984
- Luminescence and recombination in hydrogenated amorphous siliconAdvances in Physics, 1981
- The influence of spin defects on recombination and electronic transport in amorphous siliconPhilosophical Magazine Part B, 1980