Effects of substrate bias on structure and properties of a-Si:H films deposited by ECR microwave plasmas
- 1 December 1987
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 97-98, 277-280
- https://doi.org/10.1016/0022-3093(87)90066-4
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Fabrication of a-Si: H films by microwave plasmas under electron cyclotron resonance conditionsJournal of Non-Crystalline Solids, 1985
- Oxidation of plasma-deposited hydrogenated amorphous siliconThin Solid Films, 1985
- Growth of hydrogenated amorphous silicon due to controlled ion bombardment from a pure silane plasmaApplied Physics Letters, 1983
- Positive-ion bombardment of substrates in rf diode glow discharge sputteringJournal of Applied Physics, 1972