Stability of deep centers in 4H-SiC epitaxial layers during thermal annealing

6 September 2004

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 85 (10) , 1716-1718
https://doi.org/10.1063/1.1790032

Abstract

N

-type epitaxial 4H-SiC layers grown by hot-wall chemical vapor deposition were investigated with regard to deep centers by capacitance-voltage measurements and deep level transient spectroscopy (DLTS). The DLTS spectra revealed that the concentrations of deep centers were reduced by one order of magnitude by annealing at

1700 ° C

, compared to those in an as-grown material. The

Z_{1 ∕ 2}

center with an energy level of

0.59 \pm 0.03 eV

and the

E H_{6 ∕ 7}

center with an energy level of

1.66 \pm 0.11 eV

below the conduction band edge are annealed out at a temperature of

1700 ° C

or higher.

Keywords

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