Band bending variation of the Si(111) surface during its thermal oxidation
- 31 May 1984
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 50 (7) , 627-628
- https://doi.org/10.1016/0038-1098(84)90144-3
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Determination of the Fermi-level pinning position at Si(111) surfacesPhysical Review B, 1983
- Multiple-bonding configurations for oxygen on silicon surfacesPhysical Review B, 1983
- Schottky barrier formation at Pd, Pt, and Ni/Si(111) interfacesJournal of Vacuum Science & Technology A, 1983
- SiO2 ultra thin film growth kinetics as investigated by surface techniquesSurface Science, 1982
- Evaluating ratio data for the determination of reduced thicknesses by XPSSurface and Interface Analysis, 1981
- Precise Determination of the Valence-Band Edge in X-Ray Photoemission Spectra: Application to Measurement of Semiconductor Interface PotentialsPhysical Review Letters, 1980
- High-Resolution X-Ray Photoelectron Spectroscopy as a Probe of Local Atomic Structure: Application to Amorphous Siand the Si-SiInterfacePhysical Review Letters, 1979
- Photoemission Studies of 2p Core Levels of Pure and Heavily Doped SiliconPhysica Status Solidi (b), 1978