Reactively rf magnetron sputtered AlN films as gate dielectric
- 1 August 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (8) , 4586-4589
- https://doi.org/10.1063/1.332661
Abstract
AlN films were deposited on silicon (100, 111), fused quartz and GaAs (100) by sputtering in an Ar:N2 gas mixture. We report on the physical and chemical analysis of the films with the aid of scanning electron microscopy, x‐ray diffraction, and Auger electron spectroscopy. The films were found to be transparent with a c‐axis orientation. Their bulk resistivity was 1015 Ω‐cm. Quasistatic C‐V analysis of Al/AlN/Si gave a flat‐band voltage of 0.85 V, density of fixed charge of 6×1010 cm−2 and a density of fast interface charge of 1.5×1011 cm−2 eV−1 at midgap. These films were formed at 250 °C and offer an attractive fabrication alternative for gate dielectric.This publication has 10 references indexed in Scilit:
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