Comparison of steady-state and transient characteristics of lattice-matched and strained InGaAs-AlGaAs (on GaAs) and InGaAs-AlInAs (on InP) quantum-well lasers
- 1 May 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 28 (5) , 1248-1260
- https://doi.org/10.1109/3.135265
Abstract
No abstract availableThis publication has 22 references indexed in Scilit:
- Theoretical studies of the effect of strain on the performance of strained quantum well lasers based on GaAs and InP technologyIEEE Journal of Quantum Electronics, 1991
- InGaAs/InP quantum well lasers with sub-mA threshold currentApplied Physics Letters, 1990
- Submilliamp threshold InGaAs-GaAs strained layer quantum-well laserIEEE Journal of Quantum Electronics, 1990
- InGaAs/InP graded-index quantum well lasers with nearly ideal static characteristicsApplied Physics Letters, 1990
- On approximate analytical solutions of rate equations for studying transient spectra of injection lasersIEEE Journal of Quantum Electronics, 1983
- Spectral characteristics of gain-guided semiconductor lasersIEEE Journal of Quantum Electronics, 1983
- Threshold characteristics of multimode laser oscillatorsJournal of Applied Physics, 1975
- Noise characteristics of stripe-geometry double-heterostructure junction lasers operating continuously - I. Intensity noise at room temperatureIEEE Journal of Quantum Electronics, 1975
- Gain spectra in GaAs double−heterostructure injection lasersJournal of Applied Physics, 1975
- Reflectivity of mode at facet and oscillation mode in double-heterostructure injection lasersIEEE Journal of Quantum Electronics, 1972