The use of plasmon-loss peaks in studying the epitaxial silicon on alumina interface
- 1 August 1982
- journal article
- research article
- Published by Wiley in Surface and Interface Analysis
- Vol. 4 (4) , 156-159
- https://doi.org/10.1002/sia.740040406
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- A new application of electron energy loss spectroscopy technique for a non-destructive study of the Si-SiO2 interfaceSolid State Communications, 1980
- Oxide formation on the silicon (111) surface studied by Auger electron spectroscopy and by low energy electron loss spectroscopyThin Solid Films, 1979
- Electron energy loss spectroscopy studies of the Si-SiO2 interfaceApplied Physics Letters, 1979
- Use of electron energy loss structure in Auger analysisApplications of Surface Science, 1979
- Auger and electron energy loss spectroscopy of oxygen chemisorption on tinApplications of Surface Science, 1979
- Quantitative electron spectroscopy of surfaces: A standard data base for electron inelastic mean free paths in solidsSurface and Interface Analysis, 1979
- Analysis of the plasmon structure in XPS experiments of simple metalsPhysics Letters A, 1977
- Quantitative chemical analysis by ESCAJournal of Electron Spectroscopy and Related Phenomena, 1976
- Inelastic effects in X-ray photoelectron spectroscopyJournal of Electron Spectroscopy and Related Phenomena, 1974
- X-Ray Photoemission from AluminumPhysical Review Letters, 1973