Measurement and control of reagent concentrations in MOCVD reactor using ultrasonics
- 1 May 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 120 (1-4) , 98-102
- https://doi.org/10.1016/0022-0248(92)90371-o
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Metalorganic chemical vapor deposition of InGaAs-GaAs-AlGaAs strained-layer quantum well lasersJournal of Crystal Growth, 1991
- Variations in trimethylindium partial pressure measured by an ultrasonic cell on an MOVPE reactorJournal of Crystal Growth, 1989
- Comparison of ethyldimethylindium (EDMIn) and trimethylindium (TMIn) for GaInAs and InP growth by LP-MOVPEJournal of Crystal Growth, 1988