Extended wavelength region of self-assembled Ge/Si(001) islands capped with Si at different temperatures
- 30 September 2003
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (14) , 2910-2912
- https://doi.org/10.1063/1.1615832
Abstract
We investigate the emission wavelength region of self-assembled Ge/Si(001) islands. The islands were grown between 360 and 840 °C and subsequently capped with Si at low temperatures (300 °C). Under these conditions, the island morphology is preserved as revealed by atomic force microscopy. By decreasing the capping temperature, photoluminescence measurements evidence a systematic redshift enabling us to discuss the relative contribution of Si intermixing during growth and during capping. We also find that the emission wavelength can be extended up to 2.06 μm for hut clusters grown at 400 °C. By further decreasing the Ge growth temperature to 360 °C, the emission energy evidences a blueshift. This result is explained by enhanced charge carrier confinement in extremely small Ge quantum dots.Keywords
This publication has 19 references indexed in Scilit:
- Composition of self-assembled Ge/Si islands in single and multiple layersApplied Physics Letters, 2002
- Low-energy photoluminescence of structures with GeSi/Si(001) self-assembled nanoislandsJETP Letters, 2002
- Influence of the growth parameters on self-assembled Ge islands on Si(100)Materials Science and Engineering: B, 2002
- Laterally aligned Ge/Si islands: a new concept for faster field-effect transistorsMaterials Science and Engineering: B, 2002
- Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growthSurface Science Reports, 2001
- Multiple layers of self-asssembled Ge/Si islands: Photoluminescence, strain fields, material interdiffusion, and island formationPhysical Review B, 2000
- Intraband absorption in Ge/Si self-assembled quantum dotsApplied Physics Letters, 1999
- Si adatom surface migration biasing by elastic strain gradients during capping of Ge or Si1−xGex hut islandsApplied Physics Letters, 1998
- Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)Physical Review Letters, 1990
- Near-band-gap photoluminescence of Si-Ge alloysPhysical Review B, 1989