Two-dimensional solid phase epitaxial recovery of amorphous Si formed by ion implantation
- 31 January 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 99 (1-4) , 245-253
- https://doi.org/10.1016/0022-0248(90)90521-l
Abstract
No abstract availableKeywords
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- Direct evidence of arsenic clustering in high dose arsenic-implanted siliconApplied Physics Letters, 1984