Lattice Defects in High-Dose As Implantation into Localized Si Area
- 1 December 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (12R)
- https://doi.org/10.1143/jjap.27.2209
Abstract
Cross-sectional transmission electron microscopy observations have been carried out to clarify two-dimensional depth distributions of lattice defects generated in high-dose (5×1015 and 2×1016 ions/cm2), 80 and 150 keV As-implanted, and annealed Si through 1.0 and 1.5 µm windows on (100) Si. Amorphous Si (a-Si) layer thicknesses formed by implantation range between projected range, R p, +(5∼6) standards deviation, ΔR p, with a lateral spread of about 0.18 times a-Si thickness under the mask edge. Typical post-annealed, induced defects in such amorphous layers are mask edge defects composed of dislocation lines caused by a complicated process for recovering mask edge amorphous layers, together with commonly observed dislocation loops in high-dose As implantation. Interaction between dislocation loops and knocked-on oxygen atoms is discussed, particularly concerning the elimination or survival of As-rich precipitate-induced dislocation loops.Keywords
This publication has 11 references indexed in Scilit:
- Elimination of secondary defects in As-implanted Si by high concentration oxygen atomsApplied Physics Letters, 1988
- A systematic analysis of defects in ion-implanted siliconApplied Physics A, 1988
- Segregation and drift of arsenic in SiO2 under the influence of a temperature gradientApplied Physics Letters, 1987
- Elimination of end-of-range and mask edge lateral damage in Ge+ preamorphized, B+ implanted SiApplied Physics Letters, 1986
- A review of rapid thermal annealing (RTA) of B, BF 2 and As ions implanted into siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Direct evidence of arsenic clustering in high dose arsenic-implanted siliconApplied Physics Letters, 1984
- The effect of recoiled oxygen on damage regrowth and electrical properties of through-oxide implanted SiNuclear Instruments and Methods in Physics Research, 1983
- Recoil oxygen implants and thermal redistribution of oxygen in through-oxide arsenic-implanted SiApplied Physics Letters, 1981
- Influence of 16O, 12C, 14N, and noble gases on the crystallization of amorphous Si layersJournal of Applied Physics, 1977
- Dislocation reactions in arsenic-implanted and annealed siliconPhysica Status Solidi (a), 1976