Elimination of secondary defects in As-implanted Si by high concentration oxygen atoms
- 11 April 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (15) , 1210-1212
- https://doi.org/10.1063/1.99160
Abstract
Arsenic precipitate-induced dislocation loops generated at the projected range Rp of As in high-dose As-implanted, annealed (100) Si are eliminated, if oxygen-atom concentrations at the Rp region are high, i.e., above about 1×1020 atoms/cm3 . This is confirmed by the following two experiments: 80 keV, 2×1016 As+/cm2, 18-nm-thick through-oxide implantation together with subsequent annealing and a double implantation of 80 keV, 2×1016 As+ /cm2 and 22 keV, 5×1015 O+ /cm2 , followed by an annealing sequence. Experimental results suggest that the bonding of several As atoms with one oxygen atom suppresses As clustering.Keywords
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