Formation of N-AlGaAs/GaAs edge quantum wire on (111)B micro facet by MBE and magnetic depopulation of quasi-one-dimensional electron gas
- 30 June 1994
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 37 (4-6) , 571-573
- https://doi.org/10.1016/0038-1101(94)90249-6
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 10 references indexed in Scilit:
- Quasi-one-dimensional electron gas and its magnetic depopulation in a quantum wire prepared by overgrowth on a cleaved edge of AlGaAs/GaAs multiple quantum wellsApplied Physics Letters, 1993
- Formation of Two-Dimensional Electron Gas in N-AlGaAs/GaAs Heterojunctions on (111)B Microfacets Grown by Molecular Beam Epitaxy on a Patterned (001) SubstrateJapanese Journal of Applied Physics, 1993
- Enhanced crystallographic selectivity in molecular beam epitaxial growth of GaAs on mesas and formation of (001)-(111)B facet structures for edge quantum wiresApplied Physics Letters, 1991
- Atomically precise superlattice potential imposed on a two-dimensional electron gasApplied Physics Letters, 1991
- Formation of a high quality two-dimensional electron gas on cleaved GaAsApplied Physics Letters, 1990
- Optimum Growth Conditions of GaAs(111)B Layers for Good Electrical Properties by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1990
- New GaAs quantum wires on {111}B facets by selective MOCVDElectronics Letters, 1989
- Characterization of very narrow quasi-one-dimensional quantum channelsPhysical Review B, 1988
- AlGaAs/GaAs(111) heterostructures grown by molecular beam epitaxyApplied Physics Letters, 1986
- Scattering Suppression and High-Mobility Effect of Size-Quantized Electrons in Ultrafine Semiconductor Wire StructuresJapanese Journal of Applied Physics, 1980