Formation of Two-Dimensional Electron Gas in N-AlGaAs/GaAs Heterojunctions on (111)B Microfacets Grown by Molecular Beam Epitaxy on a Patterned (001) Substrate

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Abstract
Selectively doped N-AlGaAs/GaAs heterojunctions have been successfully prepared by molecular beam epitaxy (MBE) in 1-µm-wide (111)B microfacets formed on mesa-patterned (001) substrates. The sample exhibited a clear Shubnikov de Haas oscillation that was dominated by the magnetic field component perpendicular to the (111)B facet, and gave clear evidence of the formation of the two-dimensional electron gas in (111)B facets. The sheet electron density and electron mobility were estimated to be 3×1011 cm-2 and more than 8000 cm-2·V-1·s-1, respectively. These results indicate the possibility of forming edge quantum wires and other microstructures of very small cross-sectional dimensions on MBE grown facet structures.