High frequency mismatch characterization on 170GHz HBT NPN bipolar device

1 January 2006

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

No. 10719032,p. 169-172
https://doi.org/10.1109/icmts.2006.1614297

Abstract

This paper describes a high frequency mismatch approach on BJT able to reach Ft=170GHz. All obtained results are complementary and all well linked with the mismatch extract from DC measurement and in good agreement with the model parameters. In order to extract these results, a new test structure and associated parameter extraction tool have been developed.

Keywords

FREQUENCY
HETEROJUNCTION BIPOLAR TRANSISTORS
TESTING
ELECTRICAL RESISTANCE MEASUREMENT
PERFORMANCE EVALUATION
MICROELECTRONICS
PARAMETER EXTRACTION
CAPACITANCE MEASUREMENT
TIME OF ARRIVAL ESTIMATION
RESEARCH AND DEVELOPMENT

This publication has 2 references indexed in Scilit:

Improving BiCMOS technologies using BJT parametric mismatch characterisation
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
A comprehensive vertical BJT mismatch model
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002