Minority carrier lifetime improvement in silicon through laser damage gettering
- 16 March 1980
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 58 (1) , 127-134
- https://doi.org/10.1002/pssa.2210580115
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Lifetime control in silicon through impact sound stressingPhysica Status Solidi (a), 1977
- Elimination of Process‐Induced Stacking Faults by Preoxidation Gettering of Si Wafers: II . ProcessJournal of the Electrochemical Society, 1976
- A New Fast Technique for Large‐Scale Measurements of Generation Lifetime in SemiconductorsJournal of the Electrochemical Society, 1976
- Direct comparison of ion−damage gettering and phosphorus−diffusion gettering of Au in SiJournal of Applied Physics, 1975
- Radiochemical determination of damage profiles in siliconRadiation Effects, 1970
- Effect of Growth Rate on Stacking-Fault Density in Epitaxial Silicon LayersJournal of Applied Physics, 1964