Effect of Growth Rate on Stacking-Fault Density in Epitaxial Silicon Layers
- 1 March 1964
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 35 (3) , 695-697
- https://doi.org/10.1063/1.1713438
Abstract
The growth rate of an epitaxial silicon deposit affects the stacking‐fault density of the deposited layer in a linear manner over the deposition range of 0.1 to 1.0 μ/min. The stacking‐fault density is also inversely related to the substrate dislocation density for dislocation densities up to 5×103 cm−2. The conditions for the formation of stacking faults, as described by various authors to date, seem sufficient but not necessary for fault formation. The present work supports a vacancy condensation mechanism by which the low stacking‐fault energy of the material creates a natural condensation of vacancies into stacking faults.This publication has 10 references indexed in Scilit:
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