Low-threshold operation of hemispherical microcavity single-quantum-well lasers at 4 K
- 1 February 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (5) , 443-445
- https://doi.org/10.1063/1.108928
Abstract
We demonstrate low‐threshold lasing at 4 K in optically pumped hemispherical In0.2Ga0.8As single‐quantum‐well microcavities. The incident threshold pump power density is 11 kW/cm2 corresponding to an absorbed power density of about 320 W/cm2, and the measured spontaneous emission factor β is about 0.01.Keywords
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