Preparation and characterization of germanium substrates for MIS electronic devices
- 30 June 1995
- Vol. 46 (5-6) , 477-480
- https://doi.org/10.1016/0042-207x(94)00110-3
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Characterisation of n -channel germanium MOSFET with gate insulator formed by high-pressure thermal oxidationElectronics Letters, 1987
- Chemical Etching of Germanium with H3PO4–H2O2–H2O SolutionJapanese Journal of Applied Physics, 1982
- Interface Properties of Al2O3-Ge Structure and Characteristics of Al2O3-Ge MOS TransistorsJapanese Journal of Applied Physics, 1971