Sharp Boron Spikes in Silicon Grown at Reduced and Atmospheric Pressure by Fast-Gas-Switching CVD
- 1 December 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (12A) , L2307
- https://doi.org/10.1143/jjap.29.l2307
Abstract
Boron doping spikes in Si were grown by fast-gas-switching CVD at 800 and 850°C using Si2H6 and B2H6 in 0.03, 0.1 and 1 atm H2 as the carrier gas. The B2H6 doping gas was added for 2 s by two methods, namely during growth or as a flush while the Si2H6 flow was interrupted. High-resolution SIMS measurements have revealed extremely sharp and highly concentrated dopant profiles. Peak B concentrations up to 5×1021 cm-3 and, at 1 atm H2, a FWHM of 3 nm were obtained. Electrical measurements show that for B-spikes having a FWHM value of 4–5 nm, a sheet resistivity of as low as 580 Ω/ \Box can be obtained.Keywords
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