Transient time-resolved Raman scattering in semiconductors: Band-structure effects

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Abstract
Simulations of the transient time-resolved single-particle Raman-scattering cross section for nonequilibrium electrons is presented. Because of the nonequilibrium distribution and the short pulses, the fluctuation-dissipation theorem and the Fermi golden rule are no longer valid. We use an equation-of-motion method under the random-phase approximation to determine the Raman-scattering cross section. Particular attention is paid to the band-structure k-dependent resonant enhancement factor. The effect of the k-dependent resonant enhancement factor has been demonstrated to play an important role in determining the line shape of single-particle scattering spectra from spin-density-fluctuation contributions.