MOS Integrated silicon pressure sensor
- 1 July 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 32 (7) , 1191-1195
- https://doi.org/10.1109/t-ed.1985.22099
Abstract
An MOS integrated silicon-diaphragm pressure sensor has been developed. It contains two piezoresistors in a half-bridge circuit, and a new simple signal-conditioning circuit with a single NMOS operational amplifier. The negative temperature coefficient of the pressure sensitivity at the half-bridge is compensated for by a positive coefficient of the variable-gain amplifier with a temperature-sensitive integrated feedback resistor. The sensor was fabricated using the standard IC process, except for the thin diaphragm formation using the N 2 H 4 . H 2 O anisotropic etchant. Tile silicon wafer was electrostatically adhered to the glass plate to minimize induced stress. The -1750 ppm/°C temperature coefficient of sensitivity at the half-bridge was compensated for to less than +190 ppm/°C at the amplifier output in the 0- 70°C range. A less than 20-mV thermal-output offset shift was also Obtained after 26-dB amplification in the same temperature range.Keywords
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