A new approach to the hooge noise parameter for noise in semiconductors
- 1 August 1991
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 34 (8) , 917-918
- https://doi.org/10.1016/0038-1101(91)90240-y
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- 1/f noise in quarter-micron filaments of GaAs and InP made by focused ion-beam implantationSolid-State Electronics, 1991
- The relation between 1/ƒ noise and number of electronsPhysica B: Condensed Matter, 1990
- Volume and temperature dependence of the noise parameter α in SiPhysica B: Condensed Matter, 1989
- Device process dependence of low-frequency noise in GaAlAs/GaAs heterostructureSolid-State Electronics, 1989
- 1/f noise in ion-implanted indium phosphide layersSolid-State Electronics, 1988
- The experimental verification of Handel's expressions for the hooge parameterSolid-State Electronics, 1988
- Quantum 1/fnoise associated with ionized impurity scattering and electron-phonon scattering in condensed matterAdvances in Physics, 1985
- Experimental studies on 1/f noiseReports on Progress in Physics, 1981
- Noise-An "Infrared" PhenomenonPhysical Review Letters, 1975
- 1/ƒ noise is no surface effectPhysics Letters A, 1969