1/f noise in ion-implanted indium phosphide layers
- 31 August 1988
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 31 (8) , 1243-1245
- https://doi.org/10.1016/0038-1101(88)90421-2
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- 1/f noise in a quarter-micron GaAs Hall device made by focused ion-beam implantationJournal of Applied Physics, 1987
- Self-Aligned Inversion-Mode lnP MISFETJapanese Journal of Applied Physics, 1987
- InP PN Junction Waveguide Made by Mg-Ion ImplantationJapanese Journal of Applied Physics, 1986
- Low-noise behavior of InGaAs quantum-well-structured modulation-doped FET's from 10-2to 108HzIEEE Transactions on Electron Devices, 1986
- An anomalous behavior in low-frequency GaAs resistor noiseSolid-State Electronics, 1985
- Planar fully ion implanted InP power junction FET'sIEEE Electron Device Letters, 1984
- Low-power high-speed InP MISFET direct-coupled FET logicIEEE Transactions on Electron Devices, 1984
- Low-frequency noise in GaAs current limitersSolid-State Electronics, 1983
- Effects of heat treatment on noise spectrum in Au-InP Schottky barriersElectronics Letters, 1981