1/f noise in a quarter-micron GaAs Hall device made by focused ion-beam implantation
- 15 November 1987
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (10) , 4301-4303
- https://doi.org/10.1063/1.339108
Abstract
A quarter‐micron‐width Greek‐cross Hall device was fabricated by focused ion‐beam implantation with a practical product sensitivity of 85 V/AT. The Hooge’s noise parameter αH [Phys. Lett. A 2 9, 139 (1969)] was evaluated from the exact carrier number and the 1/f noise level to be 4.5×10−6, in good agreement with the quantum theory for 1/f noise.This publication has 9 references indexed in Scilit:
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