1/f noise in quarter-micron filaments of GaAs and InP made by focused ion-beam implantation
- 28 February 1991
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 34 (2) , 193-196
- https://doi.org/10.1016/0038-1101(91)90089-h
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Device process dependence of low-frequency noise in GaAlAs/GaAs heterostructureSolid-State Electronics, 1989
- 1/f noise in ion-implanted indium phosphide layersSolid-State Electronics, 1988
- 1/f noise in a quarter-micron GaAs Hall device made by focused ion-beam implantationJournal of Applied Physics, 1987
- GaAs FET's with a flicker-noise corner below 1 MHzIEEE Transactions on Electron Devices, 1987
- An anomalous behavior in low-frequency GaAs resistor noiseSolid-State Electronics, 1985
- A theory of the Hooge parameters of solid-state devicesIEEE Transactions on Electron Devices, 1985
- Low-frequency noise characteristics of Gallium Arsenide MESFETsSolid-State Electronics, 1984
- Low-frequency noise in GaAs current limitersSolid-State Electronics, 1983
- Noise in ion implanted integrated circuit resistorsSolid-State Electronics, 1977
1 ƒ noise in homogeneous single crystals of III–V compoundsPhysics Letters A, 1974