Transient enhanced diffusion of phosphorus in silicon
- 22 December 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (25) , 1711-1713
- https://doi.org/10.1063/1.97223
Abstract
The diffusion of phosphorus implanted at low dose into crystalline silicon has been investigated as a function of dose and furnace anneal time. A major feature is an initial transient diffusion enhancement, comparable with the well-known transient in boron diffusion. The transient is larger than expected from published studies using rapid thermal annealing.Keywords
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