A new methodology for two-dimensional numerical simulation of semiconductor devices
- 1 December 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
- Vol. 11 (12) , 1508-1521
- https://doi.org/10.1109/43.180264
Abstract
A methodology for obtaining the self-consistent solution of semiconductor device equations discretized in the finite-difference scheme is proposed, in which a new discretized Green's function solution method is used to solve the two-dimensional discretized Poisson equation and a surface mapping technique is developed to treat arbitrary surface boundary conditions. The two-dimensional potential distribution can then be expressed in terms of charge density distribution and bias conditions. Using the derived potential distribution, the SLOR-nonlinear iteration for the current continuity equations of both carriers can be performed by incorporating a new algorithm to obtain the self-consistent solution of a full set of semiconductor device equations without any outer iteration. An Si MESFET simulation demonstrates that the convergent rate of the proposed method can be speeded up to 4-8 times that of Gummel's method. The new method can be incorporated with the conventional solution methods to get a stable and efficient computation schemeKeywords
This publication has 11 references indexed in Scilit:
- A new methodology for developing a fast two-dimensional MOSFET device simulatorSolid-State Electronics, 1991
- Fourier method modeling of semiconductor devicesIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1990
- Two-dimensional semiconductor device analysis based on new finite-element discretization employing the S-G schemeIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1989
- A new approach to analytically solving the two-dimensional Poisson's equation and its application in short-channel MOSFET modelingIEEE Transactions on Electron Devices, 1987
- Iterative methods in semiconductor device simulationIEEE Transactions on Electron Devices, 1985
- Analysis and Simulation of Semiconductor DevicesPublished by Springer Nature ,1984
- Numerical methods for semiconductor device simulationIEEE Transactions on Electron Devices, 1983
- MINIMOS—A two-dimensional MOS transistor analyzerIEEE Transactions on Electron Devices, 1980
- VLSI limitations from drain-induced barrier loweringIEEE Transactions on Electron Devices, 1979
- A self-consistent iterative scheme for one-dimensional steady state transistor calculationsIEEE Transactions on Electron Devices, 1964