Oxidation Kinetics of Ge+-Ion Implanted Si
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Formation of epitaxial layers of Ge on Si substrates by Ge implantation and oxidationApplied Physics Letters, 1987
- Anomalous oxidation rate of silicon implanted with very high doses of arsenicApplied Physics Letters, 1987
- Novel oxidation process in Ge+-implanted Si and its effect on oxidation kineticsApplied Physics Letters, 1987
- Ge-Si layered structures: Artificial crystals and complex cell ordered superlatticesApplied Physics Letters, 1986
- GexSi1−x/Si strained-layer superlattice grown by molecular beam epitaxyJournal of Vacuum Science & Technology A, 1984
- General Relationship for the Thermal Oxidation of SiliconJournal of Applied Physics, 1965