Anomalous oxidation rate of silicon implanted with very high doses of arsenic
- 28 September 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (13) , 1001-1003
- https://doi.org/10.1063/1.98812
Abstract
An anomalous increase in oxidation rate was observed during low-temperature thermal oxidation of very high dose (5×1016, 7×1016/cm2) As+ ion implanted silicon. Oxidation of Si at 850 °C was faster than that at 950 °C. This effect was attributed to the snowplowing of arsenic (which was more pronounced at lower temperatures) creating a glassy Si-O-As layer near the Si-SiO2 interface.Keywords
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