Investigation of silicon etching and silicon dioxide bubble formation during silicon oxidation in HCl-oxygen atmospheres
- 1 April 1977
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 42 (1) , 127-131
- https://doi.org/10.1016/0040-6090(77)90086-4
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Elimination of Stacking Faults in Silicon by Trichloroethylene OxidationJournal of the Electrochemical Society, 1976
- Elimination of Stacking Faults in Silicon Wafers by HCl Added Dry O2OxidationJapanese Journal of Applied Physics, 1975
- Dielectric Breakdown Properties of SiO2 Films Grown in Halogen and Hydrogen‐Containing EnvironmentsJournal of the Electrochemical Society, 1974
- Effects of HCl and Cl2 additions on silicon oxidation kineticsJournal of Electronic Materials, 1974
- Kinetics of Thermal Growth of HCl-0[sub 2] Oxides on SiliconJournal of the Electrochemical Society, 1973
- Minority Carrier Generation Studies in MOS Capacitors on N-Type SiliconJournal of the Electrochemical Society, 1973
- Surface-state density at the (hydrogen-chloride) oxide-silicon interfaceElectronics Letters, 1972
- Neutralization of Na+ Ions in ``HCl-Grown'' SiO2Applied Physics Letters, 1972
- Hydrogen Chloride and Chlorine Gettering: An Effective Technique for Improving Performance of Silicon DevicesJournal of the Electrochemical Society, 1972
- Oxide Charge Reduction by Chemical Gettering with Trichloroethylene During Thermal Oxidation of SiliconJournal of the Electrochemical Society, 1972