Fragility of photonic band gaps in inverse-opal photonic crystals
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- 15 July 2000
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 62 (3) , 1516-1519
- https://doi.org/10.1103/physrevb.62.1516
Abstract
Inverse-opal techniques provide a promising routine of fabricating photonic crystals with a full band gap in the visible and infrared regimes. Numerical simulations of band structures of such systems by means of a supercell technique demonstrate that this band gap is extremely fragile to the nonuniformity in crystals. In the presence of disorder such as variations in the radii of air spheres and their positions, the band gap reduces significantly, and closes at a fluctuation magnitude as small as under 2% of the lattice constant. This imposes a severe requirement on the uniformity of the crystal lattice. The fragility can be attributed to the creation of this band gap at high-frequency bands (eight to nine bands) in inverse-opal crystals.Keywords
This publication has 18 references indexed in Scilit:
- Effects of structural fluctuations on the photonic bandgap during fabrication of a photonic crystalJournal of the Optical Society of America B, 1999
- Carbon Structures with Three-Dimensional Periodicity at Optical WavelengthsScience, 1998
- Creation of partial band gaps in anisotropic photonic-band-gap structuresPhysical Review B, 1998
- Preparation of Photonic Crystals Made of Air Spheres in TitaniaScience, 1998
- Photonic band gap phenomenon and optical properties of artificial opalsPhysical Review E, 1997
- Photonic bands: Convergence problems with the plane-wave methodPhysical Review B, 1992
- Existence of a photonic gap in periodic dielectric structuresPhysical Review Letters, 1990
- Quantum electrodynamics near a photonic band gap: Photon bound states and dressed atomsPhysical Review Letters, 1990
- Strong localization of photons in certain disordered dielectric superlatticesPhysical Review Letters, 1987
- Inhibited Spontaneous Emission in Solid-State Physics and ElectronicsPhysical Review Letters, 1987