Infrared measurements of interstitial oxygen in heavily doped silicon
- 1 June 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 89 (1) , 117-123
- https://doi.org/10.1016/0022-0248(88)90080-2
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Oxygen content of heavily doped siliconApplied Physics Letters, 1985
- Free Carrier Absorption in SiliconIEEE Journal of Solid-State Circuits, 1978
- Infrared Absorption in-Type SiliconPhysical Review B, 1957
- Infrared Absorption of Oxygen in SiliconPhysical Review B, 1957