Impurity Concentration Effects on Radiation Defect Introduction in InP Examined by in situ Measurement
- 1 October 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (10A) , L788
- https://doi.org/10.1143/jjap.23.l788
Abstract
Minority carrier diffusion length in 60Co γ-ray-irradiated InP single crystals is examined by in situ measurement using 60Co γ-ray induced current method. Anomalous behavior of defect introduction, whose rate decreases with increase in carrier concentration and saturates in high irradiation fluence, is found for room-temperature γ-irradiated InP. This defect introduction behavior is explained by considering defect generation and annihilation during irradiation. Room-temperature annealing rate of radiation-induced defects in InP is found to be proportional to carrier concentration at two-thirds power in InP.Keywords
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