Carrier concentration effects on radiation damage in InP
- 15 April 1984
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (8) , 3160-3162
- https://doi.org/10.1063/1.333316
Abstract
Minority carrier diffusion length and carrier concentration studies have been made on room‐temperature 1‐MeV electron irradiated liquid‐encapsulated Czochralski grown Zn‐doped p‐InP. The damage rate for the diffusion length and carrier removal rate due to irradiation have been found to strongly decrease with an increase in the carrier concentration in InP. These phenomena suggest that the induced defects interact with impurities in InP. A preliminary study on the annealing behavior has also been performed.This publication has 8 references indexed in Scilit:
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