Study of charge trapping as a degradation mechanism in electrically alterable read-only memories
- 1 January 1982
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (1) , 43-47
- https://doi.org/10.1063/1.329908
Abstract
Charge trapping in the intervening oxide layers of electrically‐alterable read‐only memories has been studied for different device configurations incorporating a dual electron injector structure (DEIS). The degradation of the write/erase capability of these devices is associated with electron capture in neutral trapping centers present in both chemical‐vapor‐deposited and thermal oxides. Annealing the exposed DEIS stack at 1000 °C in N2 results in better cycling capability. The dominant traps in unannealed samples were found to have capture cross sections of σc0x ≊10−16−10−17 cm2, while those in annealed samples have σc0x ≊10−17−10−18 cm2.This publication has 10 references indexed in Scilit:
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