Growth of low-dimensional structures on nonplanar patterned substrates
- 2 December 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 157 (1-4) , 338-343
- https://doi.org/10.1016/0022-0248(95)00353-3
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Photoluminescence and electroluminescence of SiGe dots fabricated by island growthApplied Physics Letters, 1995
- Structures of Steps and Appearances of {311} Facets on Si(100) SurfacesPhysical Review Letters, 1995
- Self-Organizing Growth of Nanometer Mesa Structures on Silicon (100) SubstratesJapanese Journal of Applied Physics, 1994
- Optical anisotropy in wire-geometry SiGe layers grown by gas-source selective epitaxial growth techniqueApplied Physics Letters, 1994
- {311} facets of selectively grown epitaxial Si layers on-patterned Si(100) surfacesPhysical Review B, 1993
- Low-temperature cleaning processes for Si molecular beam epitaxyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- Equilibrium shape of SiPhysical Review Letters, 1993
- The role of carbon in the faceting of silicon surfaces on the (111) to (001) azimuthJournal of Vacuum Science & Technology A, 1990
- Stabilities of single-layer and bilayer steps on Si(001) surfacesPhysical Review Letters, 1987
- A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniquesPhilosophical Magazine, 1966